m o s f e t page 1 rev :a CJA03N10-HF qw -jtr1 1 comchip t echnology co., l td. features -excellent package for good heat dissipation. -special process technology for high esd capability . maximum ratings (at t a=25c unless otherwise noted) drain-source voltage gate-source voltage continuous drain current power dissipation junction temperature storage temperature units symbol parameter v ds v gs i d p d r ja t j t stg v alue 100 20 3 0.5 250 150 -55 to +150 v v a w c/w c c thermal resistance from junction to ambient (note 2) circuit diagram g d s company reserves the right to improve product design , functions and reliability without notice. 1 : gate 2 : drain 3 : source d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) s o t - 8 9 - 3 l 0.181(4.60) 0.173(4.40) 0.102(2.60) 0.091(2.30) 0.1 18(3.00) typ . 0.063(1.60) 0.055(1.40) 0.047(1.20) 0.035(0.90) 0.020(0.52) 0.013(0.32) 0.017(0.44) typ . 0.060(1.50) i dm 20 a pulsed drain current (note 1) -good stability and uniformity with high eas. -high density cell design for extremely low r ds(on). 0.167(4.25) 0.155(3.94) 0.014(0.35) 0.023(0.58) 0.016(0.40) ref . 0.061(1.55) note: 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on fr 4 board , t 10s. rohs device n-channel halogen free 1 2 3
m o s f e t electrical characteristics ( t a =25c unless otherwise noted) symbol parameter conditions t yp max unit v (br)dss i gss v gs(th) r ds(on) g fs c iss c oss c rss t d(on) t r v gs =0v , i d =250 a v ds =0v , v gs =20v v ds =v gs i d = a , 250 v gs =10v , i d =5a v ds =5v , i d =2.9a v ds =25v , v gs =0v , f=1mhz v ds =30v , v gs =10v , i d =2a, r gen =2.5 , r l =15 min drain-source breakdown voltage gate-body leakage current gate-threshold voltage (note 1) forward transconductance (note 1) input capacitance output capacitance reverse transfer capacitance t urn-on delay time t urn-on r ise time 100 1 3 v 100 140 690 120 90 1 1 7.4 v na v m s pf ns 2 static characteristics dynamic characteristics (note 2) switching characteristics (note 2) t urn-of f delay time t d(off) 35 t urn-of f f all time t f 9.1 i dss v ds =100v , v gs =0v zero gate voltage drain current 1 a v sd diode forward voltage (note 1) 1.2 v i s =3a, v gs =0v note: 1. pulse test ; pulse width 300s, duty cycle 2% 2. guaranteed by design, not subject to producting. drain-source on-resistance (note 1) page 2 rev :a qw -jtr1 1 comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. t otal g ate charge q g 15.5 nc g ate-source charge q gs 3.2 gate-drain charge q gd 4.7 v ds =30v , v gs =10v , i d =3a
m o s f e t page 3 rev :a qw -jtr1 1 comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. o 1 2 0 d 1 d 2 d w 1 b c d d d 2 d 1 s o t - 8 9 - 3 l s y m b o l ( m m ) ( i n c h ) 2 . 3 6 2 0 . 0 3 9 8 . 0 0 0 . 1 0 1 . 5 0 + 0 . 1 0 6 0 . 0 0 1 . 0 0 r 3 2 . 0 0 1 . 0 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 8 0 2 . 0 0 0 . 0 5 9 0 . 0 0 4 + 7 . 0 8 7 0 . 0 7 9 1 . 2 6 0 0 . 0 3 9 s y m b o l ( m m ) ( i n c h ) 0 . 3 1 5 0 . 0 0 4 0 . 1 5 8 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 5 . 5 0 0 . 1 0 0 . 2 1 7 0 . 0 0 4 s o t - 8 9 - 3 l 4 . 8 5 0 . 1 0 0 . 1 9 1 0 . 0 0 4 4 . 4 5 0 . 1 0 0 . 1 7 5 0 . 0 0 4 1 . 8 5 0 . 1 0 0 . 0 7 3 0 . 0 0 4 1 6 . 5 0 1 . 0 0 0 . 6 5 0 0 . 0 3 9 1 2 . 0 0 0 . 3 0 / + C 0 . 1 0 0 . 4 7 2 0 . 0 1 2 / + C 0 . 0 0 4 a reel t aping specification
m o s f e t page 4 rev :a qw -jtr1 1 comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. part number marking code marking code xx/xxx = product type marking code suggested p ad layout size (inch) 0.102 (mm) 2.60 1.40 4.40 0.055 0.173 sot -89-3l 3.20 0.126 a b c d a standard packaging c a s e t y p e s o t - 8 9 - 3 l 1 , 0 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k 0.075 1.90 1.40 0.80 0.055 0.032 0.90 0.035 e f g h e 1.50 0.059 i c b d g f h i 45 CJA03N10-HF 03n10 cj a .03n10 cj a
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